n- channel 200 v ( d-s ) mosf et ME08N20/ME08N20-g 01 no v , 2012-ver1.6 parameter sy mbol maximum ratings unit drai n-so urce v o lt age v ds 200 v gate-so u rce v o lt age v gs 20 v t c =25 9 contin uou s drain current * t c =70 i d 7.2 a pulsed drain curre n t i dm 36 a t c =25 74.9 maximum power dissi p ati on t c =70 p d 47.9 w operating ju nction t e mp e r ature t j -55 to 150 therm a l re si st an ce -jun ction to ca se* r jc 1.67 /w general descrip t ion t he ME08N20 is the n-c h a nne l lo gic e n h ancem ent mo de p o w e r field ef fect transistors ar e pr oduc ed usin g hig h cel l de nsi t y dmos trench techn o l o g y . t h is hig h dens it y pr oces s is especi a ll y t a ilore d to minimiz e on-state resist anc e. t hes e dev ice s are p a rticu l a r l y su ite d for lo w volt a g e appl icatio n su ch as lcd i n v e rter , compute r po w e r mana geme n t and dc to dc converter circu i t s w h ic h nee d l o w i n -li n e po w e r loss. fea t ures r ds(on) Q0.4 ? @v gs = 10v super h i gh dens it y ce ll de sign for e x trem el y lo w r ds(on) exce ptio nal on-resista n ce and ma ximum dc current capa bil it y applications po w e r ma n agem ent dc/dc co n verter lcd t v & monitor dis pl a y inv e rter ccfl inv e rter secon dar y s y nc hro n o u s rectificati o n pin configura tion absolute maximum ratings (t c =25 unless otherw i se noted) * notes: t he device mo unte d on 1i n 2 f r 4 bo ard w i th 2 oz c opp er (t o - 25 2-3 l ) t op v i ew e orde ring inf o rma tion : m e 0 8 n 2 0 ( p b - f r e e ) me08n 20-g (green pro duct- haloge n free) http://
n- channel 200 v ( d-s ) mosf et ME08N20/ME08N20-g 02 no v , 2012-v e r1.6 notes: a. pulse test: pulse w i d t h Q 300us, d u ty c y cle Q 2 % , guarante ed b y desig n, not su bject to prod uc tion testing. b . m a t su ki e l e c t r i c/ f o r ce m o s r e se r ve s t he ri ght to improve prod uct desi g n , functions an d reliabi lit y w i t h o u t not ice. sy mbol parameter conditions min t y p max unit static v (br)dss drai n-so urce breakdo wn v o lt age v gs =0v , i d =2 50 a 200 v v gs(th) gate thresho l d v o lt age v ds =v gs , i d =250 a 2 4 v i gss gate leak age current v ds =0v , v gs =20v 100 na i dss zero g a te v o lt age drain current v ds =200 v , v gs =0v 1 a r ds(on) drai n-so urce on-s t a te re sist an ce a v gs =1 0v , i d = 5a 0.35 0.40 ? v sd diod e forwa r d v o lt age i s =9a , v gs =0 v 1.5 v dynamic qg t o t a l gate ch arge 51.7 qgs gate-so urce cha r ge 12.7 qgd gate-drain charg e v dd =160v , v gs =1 0v , i d =9 a 16.3 nc ciss input ca p a cit ance 2610 co ss out put ca p a cit a n c e 68 cr ss rev e r s e t r a n s fer ca p a ci t a nce v ds =25v , v gs = 0 v , f= 1mhz 21 pf t d(on) tu r n - o n d e l a y ti m e 26.9 t r tu r n - o n r i s e ti m e 37.2 t d(of f) tu r n - o f f de l a y ti m e 63.5 t f tu r n - o n f a l l ti m e v ds =160 v , v gs =1 0v , r g =4. 7 ? , r l =17.7 ? 43.8 ns electrical characteristics (t c =25 unless otherwise specified)
n- channel 200 v ( d-s ) mosf et ME08N20/ME08N20-g 03 no v , 2012-ver1.6 t y pical characteristics (t j =25 n o t e d )
n- channel 200 v ( d-s ) mosf et ME08N20/ME08N20-g 04 no v , 2012-ver1.6 t y pical characteristics (t j =25 n o t e d )
n- channel 200 v ( d-s ) mosf et ME08N20/ME08N20-g 05 no v , 2012-v e r1.6 symbol min max a 2.10 2.50 b 0.40 0.90 c 0.40 0.90 d 5.30 6.30 d1 2.20 2.90 e 6.30 6.75 e1 4.80 5.50 l1 0.90 1.80 l2 0.50 1.10 l3 0.00 0.20 h 8.90 10.40 p 2.30 bsc to-252-3l package outline
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